IPB200N15N3 G

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G OptiMOS™3 Power-Transistor IPP200N15N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) VDS 150 V RDS(on),max 20 mW ID 50 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G Package PG-TO263-3 PG-TO252-3 PG-TO262-3 PG-TO220-3 Marking 200N15N 200N15N 200N15N 200N15N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 50 T C=100 °C 40 Pulsed drain current2) I D,pulse T C=25 °C 200 Avalanche energy, single pulse E AS I D=50 A, R GS=25 W 170 Reverse diode dv /dt dv /dt I D=50 A, V DS=120 V, di /dt =100 A/µs, T j,max=175 °C Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 1) 2) 6 Unit A mJ kV/µs ±20 V 150 W -55 ... 175 °C 55/175/56 J-STD20 and JESD22 See figure 3 Rev. 2.07 page 1 2014-01-09 IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G Parameter IPP200N15N3 G Values Symbol Conditions Unit min. typ. max. - - 1 minimal footprint - - 75 6 cm2 cooling area3) - - 50 150 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=90 µA 2 3 4 Zero gate voltage drain current I DSS V DS=120 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=120 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=50 A - 16 20 mW V GS=8 V, I D=25 A - 16 20 - 2.4 - W 29 57 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=50 A 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.07 page 2 2014-01-09 IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G Parameter IPP200N15N3 G Values Symbol Conditions Unit min. typ. max. - 1820 - - 214 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 5 - Turn-on delay time t d(on) - 14 21 Rise time tr - 11 17 Turn-off delay time t d(off) - 23 35 Fall time tf - 6 9 Gate to source charge Q gs - 10 14 Gate to drain charge Q gd - 4 6 Switching charge Q sw - 9 13 Gate charge total Qg - 23 31 Gate plateau voltage V plateau - 5.7 - Output charge Q oss - 60 79 nC - - 50 A - - 220 - 1 1.2 V - 106 - ns - 332 - nC V GS=0 V, V DS=75 V, f =1 MHz V DD=75 V, V GS=10 V, I D=50 A, R G,ext=1.6 W pF ns Gate Charge Characteristics4) V DD=75 V, I D=50 A, V GS=0 to 10 V V DD=75 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) T C=25 °C V GS=0 V, I F=50 A, T j=25 °C V R=75 V, I F=I S, di F/dt =100 A/µs See figure 16 for gate charge parameter definition Rev. 2.07 page 3 2014-01-09 IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 160 IPP200N15N3 G 60 120 ID [A] Ptot [W] 40 80 20 40 0 0 0 50 100 150 200 0 50 TC [°C] 100 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 1 µs 10 µs 102 100 µs 100 0.5 ZthJC [K/W] ID [A] 1 ms 101 10 ms 0.2 0.1 10-1 DC 0.05 100 0.02 0.01 single pulse 10-1 10-2 10-1 100 101 102 103 VDS [V] Rev. 2.07 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2014-01-09 IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 100 40 7V 10 V 6.5 V 5V 35 5.5 V 6V 8V 80 30 ID [A] RDS(on) [mW] 6V 60 40 5.5 V 25 20 8V 15 10 V 10 20 5V 5 4.5 V 0 0 0 1 2 3 4 5 0 20 VDS [V] 40 60 80 120 160 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 100 80 80 60 60 ID [A] gfs [S] 100 40 40 20 20 175 °C 25 °C 0 0 0 2 4 6 8 VGS [V] Rev. 2.07 0 40 80 ID [A] page 5 2014-01-09 IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 50 4 45 3.5 40 900 µA 3 35 25 VGS(th) [V] RDS(on) [mW] 90 µA 2.5 30 98% 20 typ 2 1.5 15 1 10 0.5 5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss 103 102 IF [A] C [pF] 25 °C Coss 102 175 °C 25°C, 98% 101 101 Crss 175°C, 98% 100 0 20 40 60 80 100 0.5 1 1.5 2 VSD [V] VDS [V] Rev. 2.07 0 page 6 2014-01-09 IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=50A pulsed parameter: T j(start) parameter: V DD 100 IPP200N15N3 G 10 120 V 8 75 V 25 °C 30 V 100 °C VGS [V] IAS [A] 6 125 °C 10 4 2 1 0 1 10 100 1000 0 10 tAV [µs] 20 30 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 170 V GS Qg 165 VBR(DSS) [V] 160 155 150 V gs(th) 145 Q g(th) 140 Q sw Q gs 135 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.07 page 7 2014-01-09 IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G PG-TO263-3 Outline Rev. 2.07 page 8 2014-01-09 IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G PG-TO252-3 Outline Rev. 2.07 page 9 2014-01-09 IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G PG-TO262-3 Outline Rev. 2.07 page 10 2014-01-09 IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G PG-TO220-3 Outline Rev. 2.07 page 11 2014-01-09 IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.07 page 12 2014-01-09